MGF4941AL hemt equivalent, super low noise ingaas hemt.
Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
L to K band low noise amplifiers
QUALITY GRADE
GG.
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The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.)
Fig.1
A.
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